دیتاشیت FQB34P10TM
مشخصات دیتاشیت
| نام دیتاشیت |
FQB34P10
|
| حجم فایل |
2027.378
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
onsemi FQB34P10TM
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Operating Temperature:
-55°C~+175°C@(Tj)
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Power Dissipation (Pd):
3.75W;155W
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Total Gate Charge (Qg@Vgs):
110nC@10V
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Drain Source Voltage (Vdss):
100V
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Input Capacitance (Ciss@Vds):
2910pF@25V
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Continuous Drain Current (Id):
33.5A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
60mΩ@10V,16.75A
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Package:
TO-263-3
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Manufacturer:
onsemi
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Series:
QFET®
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Packaging:
Cut Tape (CT)
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Part Status:
Active
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FET Type:
P-Channel
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Technology:
MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss):
100V
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Current - Continuous Drain (Id) @ 25°C:
33.5A (Tc)
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Drive Voltage (Max Rds On, Min Rds On):
10V
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Rds On (Max) @ Id, Vgs:
60mOhm @ 16.75A, 10V
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Vgs(th) (Max) @ Id:
4V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs:
110nC @ 10V
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Vgs (Max):
±25V
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Input Capacitance (Ciss) (Max) @ Vds:
2910pF @ 25V
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FET Feature:
-
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Power Dissipation (Max):
3.75W (Ta), 155W (Tc)
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Mounting Type:
Surface Mount
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Supplier Device Package:
D²PAK (TO-263AB)
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Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Base Part Number:
FQB3
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detail:
P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D²PAK (TO-263AB)
